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| (R) STGD3NB60H N-CHANNEL 3A - 600V TO-252 PowerMESHTM IGBT TYPE STGD3NB60H s V CES 600 V V CE(sat ) < 2.8 V IC 3A s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 DPAK TO-252 (Suffix "T4") DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 20 20 6 3 24 35 0.28 -65 to 150 150 Un it V V V A A A W W /o C o o C C (*) Pulse width limited by safe operating area June 1999 1/8 STGD3NB60H THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 3.57 100 1.5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA V CE = Max Rating V CE = Max Rating V GE = 20 V ON () Symbo l V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Con ditions IC = 250 A IC = 3 A IC = 3 A Min. 3 2.4 1.9 Typ. Max. 5 2.8 Unit V V V Tj = 125 o C DYNAMIC Symbo l gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Con ditions V CE =25 V V CE = 25 V IC = 3 A f = 1 MHz V GE = 0 Min. 1.3 160 23 4.5 Typ. 2.4 235 33 6.6 21 6 7.6 12 300 43 8.6 27 Max. Unit S pF pF pF nC nC nC A V CE = 480 V IC = 3 A V GE = 15 V V clamp = 480 V T j = 150 o C R G =10 SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Co nditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 T j = 125 o C IC = 3 A R G = 10 IC = 3 A V GE = 15 V Min . T yp. 16 30 400 37 Max. Unit ns ns A/s J 2/8 STGD3NB60H ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbo l tc t r (v off ) t d (off) tf E o ff(**) E ts tc t r (v off ) t d (off) tf E o ff(**) E ts Parameter Test Con ditions IC = 3 A V GE = 15 V Min. Typ. 90 36 53 70 33 65 180 82 58 110 88 125 Max. Unit ns ns ns ns J J ns ns ns ns J J Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 T j = 125 o C Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss IC = 3 A V GE = 15 V (*) Pulse width limited by max. junction temperature () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGD3NB60H Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGD3NB60H Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/8 STGD3NB60H Switching Off Safe Operating Area Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/8 STGD3NB60H TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 DIM. H A C2 C DETAIL "A" A1 L2 D DETAIL "A" B = = 3 B2 = = G E 2 L4 1 = = A2 0068772-B 7/8 STGD3NB60H Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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